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13 March, 13:15

Calculate the drift current density (current density due to conductivity) induced in a silicon semiconductor at T = 300 K when the electron concentration is 1016 cm-3 and applied electric field is 30 V/cm.]

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  1. 13 March, 14:00
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    Drift Density = 64.8 A/cm²

    Explanation:

    Drift Density is given as

    Drift Density = σ x E, where V is the conductivity and E is the applied electric field

    Jd = σ x E, equation 1

    At 300 K, it is known that the electron mobility μ (n), is given equal to 1350 cm²/Vs

    Therefore, conductivity (σ) is

    σ = e x n x μ (n), where n is the electron concentration and e is the charge on each electron

    Substitute 1.6 x 10⁻¹⁹ for e, 10¹⁶ for n and 1350 for μ (n)

    σ = 1.6 x 10⁻¹⁹ x 10¹⁶ x 1350

    σ = 2.160

    Substitute the value of σ in equation 1

    Then, the drift current density is:

    Jd = sigma x E, where E is the applied electric field

    Jd = 2.16 x 30

    Jd = 64.8 A/cm²
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