Ask Question
20 November, 20:27

A square silicon chip (k = 152 W/m·K) is of width 7 mm on a side and of thickness 3 mm. The chip is mounted in a substrate such that its side and back surfaces are insulated, while the front surface is exposed to a coolant. If 6 W are being dissipated in circuits mounted to the back surface of the chip, what is the steady-state temperature difference between the back and front surfaces?

+4
Answers (1)
  1. 20 November, 21:48
    0
    The steady-state temperature difference is 2.42 K

    Explanation:

    Rate of heat transfer = kA∆T/t

    Rate of heat transfer = 6 W

    k is the heat transfer coefficient = 152 W/m. K

    A is the area of the square silicon = width^2 = (7/1000) ^2 = 4.9*10^-5 m^2

    t is the thickness of the silicon = 3 mm = 3/1000 = 0.003 m

    6 = 152*4.9*10^-5*∆T/0.003

    ∆T = 6*0.003/152*4.9*10^-5 = 2.42 K
Know the Answer?
Not Sure About the Answer?
Find an answer to your question ✅ “A square silicon chip (k = 152 W/m·K) is of width 7 mm on a side and of thickness 3 mm. The chip is mounted in a substrate such that its ...” in 📘 Engineering if you're in doubt about the correctness of the answers or there's no answer, then try to use the smart search and find answers to the similar questions.
Search for Other Answers